Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

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Correction to: Nature https://doi.org/10.1038/s41586-026-11047-9 Published online 30 September 2026

In the version of the article initially published, the y-axis label of Fig. 5d was “Id (A µm–1)” but should have been “Id (mA µm–1)”. This correction has been made to the HTML and PDF versions of the article.

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Author notes

  1. These authors contributed equally: Chien-Chih Tseng, Chang-Hsun Huang, Jui-Cheng Kao

Authors and Affiliations

  1. Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan

    Chien-Chih Tseng, Jui-Han Fu, Seong Rae Cho, Chenxi Lei, Kai Qi & Vincent Tung

  2. Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

    Chang-Hsun Huang & Yi-Chia Chou

  3. Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

    Jui-Cheng Kao & Yu-Chieh Lo

  4. Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan

  5. Institute of Engineering Innovation, The University of Tokyo, Tokyo, Japan

    Aowen Li, Ryo Ishikawa & Naoya Shibata

  6. National Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan

    Cheng-Tang Pan, Wei-Chun Chen, Fong-Zhi Chen & Yu-Wei Lin

  7. Center for Heterogeneous and Innovative Post-Silicon Materials (CHIPs), Chang Gung University, Taoyuan, Taiwan

    Ming-Chung Wu & Vincent Tung

  8. Department of Materials Engineering, The University of Tokyo, Tokyo, Japan

  9. Physics Division, National Centre for Theoretical Sciences, Taipei, Taiwan

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Corresponding authors

Correspondence to Jui-Han Fu, Yi-Chia Chou, Chun-Wei Pao  () or Vincent Tung.

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Tseng, CC., Huang, CH., Kao, JC. et al. Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride. Nature (2026). https://doi.org/10.1038/s41586-026-11267-z

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  • DOIhttps://doi.org/10.1038/s41586-026-11267-z

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Original source Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

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